Manufacturer Part Number
MT53E1G32D4NQ-046 WT
E
Manufacturer
Micron Technology
Introduction
The MT53E1G32D4NQ-046 WT:E is a high-capacity, low-power mobile DRAM memory solution from Micron Technology. This LPDDR4 (Low-Power Double Data Rate 4) SDRAM (Synchronous Dynamic Random Access Memory) device provides a compact and power-efficient memory option for a wide range of mobile and embedded applications.
Product Features and Performance
High-density 32Gbit memory capacity
1Gx32 memory organization
133 GHz clock frequency
Low voltage operation at 1.1V
Wide operating temperature range of -30°C to 85°C
Product Advantages
Compact and space-saving design
Excellent power efficiency for extended battery life
Reliable operation in challenging temperature conditions
Optimal performance for mobile and embedded systems
Key Reasons to Choose This Product
Industry-leading memory capacity in a small footprint
Superior energy efficiency for extended device runtime
Robust thermal performance for versatile application use
Trusted Micron quality and reliability
Quality and Safety Features
Rigorous quality control and testing procedures
Compliance with industry safety and environmental standards
Compatibility
This LPDDR4 SDRAM memory is designed to be compatible with a wide range of mobile and embedded devices that require high-capacity, low-power memory solutions.
Application Areas
Smartphones and tablets
Wearable electronics
Automotive infotainment systems
Industrial and IoT (Internet of Things) devices
Product Lifecycle
The MT53E1G32D4NQ-046 WT:E is an obsolete product, meaning it is no longer in active production. However, Micron Technology may have equivalent or alternative LPDDR4 SDRAM models available. Customers are advised to contact our website's sales team for more information on current product options and availability.
MT53E256M32D2DS-046Micron Technology